Infineon IPN70R360P7SATMA1: High-Performance 700V CoolMOS Power Transistor

Release date:2025-11-05 Number of clicks:179

Infineon IPN70R360P7SATMA1: High-Performance 700V CoolMOS Power Transistor

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPN70R360P7SATMA1 stands out as a premier solution, embodying the advanced CoolMOS™ P7 technology to meet these demanding challenges. This 700V superjunction MOSFET is engineered specifically for high-performance switched-mode power supplies (SMPS), offering designers a superior component for applications ranging from server and telecom power to industrial motor drives and lighting.

The core of this transistor's prowess lies in its exceptional efficiency metrics. By achieving an ultra-low on-state resistance (RDS(on)) of just 360 mΩ maximum, the device minimizes conduction losses. This is further complemented by outstanding switching characteristics, which significantly reduce switching losses even at high frequencies. This combination allows power supply designers to push the boundaries of operating frequency, leading to smaller magnetic components and a substantial increase in overall power density.

Beyond raw performance, the IPN70R360P7SATMA1 is built for robustness and ease of use. It features a highly rugged body diode with excellent reverse recovery behavior, enhancing its reliability in hard-switching topologies like flyback converters. The technology also provides increased avalanche energy robustness, ensuring greater resilience against voltage spikes and unpredictable transient events in harsh electrical environments. Its PQFN 8x8 package (D2PAK-7) offers a low-profile design with superior cooling capability through an exposed drain tab, facilitating efficient heat dissipation and simplifying thermal management.

ICGOOODFIND: The Infineon IPN70R360P7SATMA1 is a top-tier 700V MOSFET that sets a new benchmark for efficiency and power density in modern SMPS designs. Its blend of ultra-low RDS(on), fast switching speed, and rugged construction makes it an indispensable component for engineers striving to create more compact, efficient, and reliable power systems.

Keywords: CoolMOS P7, High Efficiency, Power Density, Ultra-Low RDS(on), Switching Performance.

Home
TELEPHONE CONSULTATION
Whatsapp
About Us