Infineon IPB072N15N3G: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPB072N15N3G stands out as a premier solution, leveraging the advanced OptiMOS 5 technology platform to set new benchmarks in performance for a wide array of power conversion applications.

This 150 V N-channel power MOSFET is engineered to minimize losses in demanding switching environments. Its cornerstone is an exceptionally low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance (R DS(on)) of just 7.2 mΩ, it significantly reduces conduction losses, allowing for higher load currents with less wasted energy and lower heat generation. Complementing this is an optimized gate charge (Q G), which ensures swift switching transitions. This reduction in switching losses is critical for high-frequency operation, enabling designers to shrink the size of magnetic components and capacitors, thereby increasing overall power density.

The device is housed in an TO-Leadless (TOLL) package, which is a key enabler for its superior performance. This package offers an extremely low parasitic inductance and an excellent thermal connection to the PCB. The large exposed cooling pad facilitates efficient heat dissipation, allowing the MOSFET to handle high power levels without overheating. The compact footprint of the TOLL package makes it an ideal choice for space-constrained applications like server and telecom power supplies, industrial motor drives, and solar inverters.

Furthermore, the IPB072N15N3G is designed with robustness in mind. It features a high avalanche ruggedness and is qualified for industrial applications, ensuring long-term reliability even under stressful operating conditions. Its logic-level compatible gate drive simplifies the design of the driving circuitry, offering flexibility and ease of use for engineers.

ICGOO FIND: The Infineon IPB072N15N3G exemplifies the evolution of power MOSFETs, combining ultra-low resistance, fast switching capability, and superior thermal performance in a compact package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in their next-generation power systems.

Keywords:

1. OptiMOS 5 Technology

2. Low R DS(on)

3. High Efficiency

4. TOLL Package

5. Power Density