Infineon BSZ097N04LSGATMA1: 40 V OptiMOS Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, Infineon Technologies introduces the BSZ097N04LSGATMA1, a 40 V N-channel OptiMOS power MOSFET engineered to set a new benchmark in performance for a wide array of power conversion applications.

This MOSFET is built upon Infineon’s advanced OptiMOS technology platform, which is renowned for its exceptional balance of low on-state resistance and high switching speed. The device boasts an ultra-low maximum RDS(on) of just 0.97 mΩ, a critical figure that directly translates to minimized conduction losses. When combined with outstanding switching characteristics, this results in significantly lower total power dissipation across the operational range. This synergy is paramount for achieving high efficiency in demanding circuits, particularly those operating at elevated frequencies where switching losses traditionally dominate.

The 40 V drain-source voltage (VDS) rating makes the BSZ097N04LSGATMA1 an ideal candidate for a multitude of use cases. It is perfectly suited for secondary side synchronous rectification in switch-mode power supplies (SMPS), such as server and telecom power units, where it reclaims energy that would otherwise be lost as heat. Furthermore, its robust performance characteristics make it an excellent fit for DC-DC conversion stages in automotive systems, industrial motor drives, and battery management solutions, enabling designers to create more compact and energy-efficient products.

Packaged in the space-saving SuperSO8 (LFPAK), this MOSFET offers a superior thermal performance-to-footprint ratio. This allows for higher power throughput in a smaller physical space, addressing the industry's constant drive toward miniaturization. The package's low parasitic inductance also helps in preserving the excellent switching performance of the silicon.

ICGOOODFIND: The Infineon BSZ097N04LSGATMA1 stands out as a superior component for engineers prioritizing peak efficiency and power density. Its industry-leading low RDS(on), fast switching capability, and thermally efficient package make it a transformative solution for modern power conversion designs, from high-frequency rectification to robust DC-DC converters.

Keywords: Low RDS(on), Synchronous Rectification, High-Efficiency, OptiMOS Technology, Power Density.