Infineon IPP50R500CE: A 500V CoolMOS™ Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPP50R500CE, a 500V CoolMOS™ CE series power transistor, stands out as a premier solution engineered to meet these challenges in a wide array of high-performance applications.

This MOSFET is built upon Infineon's revolutionary superjunction (SJ) technology, which redefined the performance benchmarks for high-voltage transistors. The key advantage of this technology is its ability to drastically reduce the on-state resistance (RDS(on)) for a given silicon area. The IPP50R500CE boasts an exceptionally low typical RDS(on) of just 50 mΩ at 10 V gate voltage. This low resistance is the primary contributor to minimizing conduction losses, a major source of inefficiency and heat generation in power supplies.

Beyond low conduction losses, the switching performance of a transistor is equally vital. The IPP50R500CE features optimized internal capacitances and an ultra-fast body diode. This design leads to reduced switching losses, enabling operation at higher frequencies. The ability to switch at higher frequencies allows designers to use smaller passive components like inductors and transformers, directly contributing to increased power density and reduced overall system size and cost.

The "CE" in its name signifies the "Commercial Excellence" variant, which offers an optimal balance between performance and cost, making advanced technology accessible for a broad spectrum of products. This transistor is particularly suited for demanding switching environments such as:

Switch-Mode Power Supplies (SMPS): Especially in server, telecom, and industrial power supplies where efficiency standards like 80 Plus are crucial.

Power Factor Correction (PFC) stages: A critical circuit for improving the efficiency of AC-DC converters.

Motor control and driving circuits: In industrial automation and consumer appliances.

Lighting solutions: Including high-efficiency LED drivers.

Furthermore, the device offers enhanced robustness and reliability. Its low gate charge (QG) simplifies drive circuit design and reduces stress on the controller IC. The excellent thermal performance, aided by its low RDS(on), ensures stable operation even under high load conditions.

ICGOOODFIND: The Infineon IPP50R500CE is a benchmark high-voltage MOSFET that exemplifies the progress in power semiconductor technology. Its combination of extremely low on-resistance, fast switching capabilities, and cost-effective commercial design makes it an superior choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation switching applications.

Keywords: CoolMOS, Superjunction Technology, Low RDS(on), High-Efficiency Switching, Power Density