Infineon IRLR024NTRPBF: Key Specifications and Application Circuit Design Considerations

The Infineon IRLR024NTRPBF is a widely adopted N-channel HEXFET power MOSFET, renowned for its efficient performance in low-voltage, high-switching-frequency applications. This article delves into its core specifications and provides essential guidance for designing robust application circuits.

Key Specifications

The IRLR024NTRPBF is characterized by several critical parameters that define its operational envelope:

Low On-Resistance (RDS(on)): With a maximum RDS(on) of just 17 mΩ at VGS = 10 V, this MOSFET minimizes conduction losses, making it highly efficient for power switching tasks. This low resistance is crucial for applications where thermal management is a primary concern.

Low Gate Charge (Qg): The device features a typical total gate charge (Qg) of 13 nC. This low value allows for very fast switching speeds and reduces the drive power required from the gate driver IC, which is vital for high-frequency operation.

Voltage Ratings: It is rated for a drain-to-source voltage (VDS) of 55 V and a gate-to-source voltage (VGS) of ±20 V, making it suitable for a broad range of low-voltage applications such as 12V or 24V systems, including DC-DC converters and motor control.

Continuous Drain Current (ID): It can handle a continuous drain current (ID) of 17 A at a case temperature (TC) of 25°C, providing substantial current handling capability in a compact D-Pak (TO-252) package.

Application Circuit Design Considerations

Successfully integrating the IRLR024NTRPBF into a design requires careful attention to several areas:

1. Gate Driving: To leverage its fast switching capability, a dedicated gate driver IC is strongly recommended. The driver must be capable of sourcing and sinking sufficient peak current to quickly charge and discharge the MOSFET's gate capacitance. This minimizes the time spent in the linear region, reducing switching losses. A gate resistor (e.g., 10-100 Ω) is essential to dampen ringing and prevent parasitic oscillations.

2. Protection Mechanisms:

Overvoltage Protection: The VGS(max) rating of ±20 V must never be exceeded. A Zener diode clamp between the gate and source is a common and effective protection measure against voltage spikes that could otherwise destroy the gate oxide layer.

Avalanche Ruggedness: While the device can handle some avalanche energy, good layout practices and, if necessary, an external snubber circuit or TVS diode should be used to suppress voltage spikes on the drain caused by parasitic inductance.

3. Thermal Management: Despite its low RDS(on), power dissipation (I²R RDS(on)) can generate significant heat, especially under high load currents. Proper heatsinking is critical. The design must ensure that the maximum junction temperature (Tj(max) = 175°C) is not exceeded under worst-case conditions. Calculating power dissipation and using the thermal resistance (RθJA) from the datasheet are necessary steps for effective thermal design.

4. PCB Layout: A good PCB layout is paramount for stability and performance. Key practices include:

Minimizing Parasitic Inductance: Keep the loop areas for the high-current switch path (drain) and the gate drive path as small as possible. This reduces parasitic inductance, which causes voltage spikes and ringing.

Use of a Ground Plane: A solid ground plane provides a stable reference and helps shield against noise.

Placement of Decoupling Capacitors: Place a ceramic capacitor (e.g., 100 nF) very close to the MOSFET's gate and source pins to provide a low-inductance path for the high-frequency currents required by the gate driver.

ICGOOODFIND: The Infineon IRLR024NTRPBF is an excellent choice for designers seeking efficiency and speed in low-voltage power conversion and control. Its standout features of extremely low on-resistance and low gate charge enable compact, efficient, and high-performance designs. Success hinges on a thoughtful design approach, prioritizing strong gate driving, effective thermal management, and a clean PCB layout to mitigate parasitic effects and ensure reliable operation.

Keywords: Low RDS(on), Gate Charge (Qg), Gate Driver, Thermal Management, PCB Layout.