Infineon IPP028N08N3: A High-Performance OptiMOS 5 Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in modern electronics has made the choice of switching components more critical than ever. At the forefront of this innovation is Infineon's IPP028N08N3, a benchmark N-channel power MOSFET engineered from the ground up using the advanced OptiMOS™ 5 technology. This device sets a new standard for performance in a wide array of demanding applications, from server and telecom power supplies to industrial motor drives and high-performance computing.
Built on an ultra-fine process technology, the IPP028N08N3 is characterized by its exceptionally low typical on-state resistance (R DS(on)) of just 2.0 mΩ at a gate-source voltage of 10 V. This remarkably low resistance is the cornerstone of its high-efficiency performance. It directly translates to minimized conduction losses, allowing for more current to be handled with significantly less energy wasted as heat. This capability is paramount for improving the overall system efficiency, reducing thermal management requirements, and enabling more compact and powerful designs.
Beyond its stellar static performance, this MOSFET excels in dynamic operation. The OptiMOS™ 5 technology ensures superior switching performance with very low gate charge (Q G) and optimized internal capacitances. This combination allows for faster switching speeds, which is essential for high-frequency SMPS (Switch-Mode Power Supplies) designs. Faster switching enables the use of smaller passive components like inductors and capacitors, directly contributing to increased power density. Furthermore, the robust design ensures a excellent avalanche ruggedness and high body diode robustness, providing enhanced reliability and operational safety under harsh conditions, including inductive switching and overvoltage events.
Housed in a space-saving TO-220 FullPAK package, the IPP028N08N3 offers a compelling advantage: its gull-wing leads provide the necessary creepage and clearance distances for many applications while maintaining excellent thermal performance. The package is designed for low thermal resistance, ensuring that heat is effectively transferred away from the silicon die, thereby supporting sustained operation under high load conditions.
ICGOOODFIND: The Infineon IPP028N08N3 stands out as a premier solution for designers pushing the limits of power conversion. Its optimal blend of ultra-low R DS(on), fast switching capability, and proven ruggedness within a versatile package makes it an indispensable component for achieving top-tier efficiency and reliability in advanced power systems.
Keywords: OptiMOS™ 5, Low R DS(on), High Switching Frequency, High Efficiency, TO-220 FullPAK.
