Infineon IPP111N15N3 G5: A High-Performance 150V OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPP111N15N3 G5 stands out as a premier 150V N-channel power MOSFET built on the advanced OptiMOS™ 5 technology platform. This device is engineered to deliver exceptional performance in a wide array of power conversion applications, from industrial motor drives and solar inverters to switch-mode power supplies (SMPS) and DC-DC converters.

A cornerstone of this MOSFET's performance is its extremely low figure-of-merit (FOM), which is a product of its on-state resistance (RDS(on)) and gate charge (Qg). The IPP111N15N3 G5 boasts a remarkably low typical RDS(on) of just 1.8 mΩ at 10 V, significantly reducing conduction losses. Simultaneously, its optimized gate charge ensures swift switching transitions, which minimizes switching losses. This superior combination allows systems to operate at higher frequencies with reduced energy dissipation, leading to cooler operation and the potential for smaller magnetic components and heatsinks.

The benefits of the OptiMOS™ 5 technology extend beyond raw efficiency numbers. The device offers an excellent body diode with soft recovery characteristics, which is critical for mitigating voltage spikes and electromagnetic interference (EMI) in hard-switching topologies like phase-shifted full-bridge converters. This inherent robustness simplifies circuit design and enhances overall system reliability.

Housed in a TO-220 FullPAK package, the IPP111N15N3 G5 provides a decisive advantage. This package features a fully molded plastic construction that offers enhanced isolation and creepage distances, improving safety and reliability in high-voltage environments. The isolated mounting surface simplifies the assembly process and eliminates the need for additional insulating hardware, reducing both bill-of-materials costs and thermal resistance from junction to heatsink.

Furthermore, the MOSFET is qualified for industrial applications, ensuring high reliability and performance under demanding conditions. Its high maximum junction temperature rating further underscores its capability to handle tough operational environments.

ICGOODFIND: The Infineon IPP111N15N3 G5 is a top-tier 150V power MOSFET that sets a high benchmark for efficiency and power density. Its industry-leading low RDS(on) and optimized switching characteristics, combined with the safety and convenience of the FullPAK package, make it an ideal solution for designers aiming to maximize performance and reliability in next-generation power conversion systems.

Keywords:

1. OptiMOS™ 5 Technology

2. Low RDS(on)

3. High Efficiency

4. TO-220 FullPAK

5. Power Conversion