Infineon IPD80R2K8CEATMA1: High-Performance Power MOSFET for Automotive and Industrial Applications
The relentless drive for higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems places immense demands on power semiconductors. Addressing these challenges head-on, the Infineon IPD80R2K8CEATMA1 stands out as a premier N-channel power MOSFET engineered to deliver exceptional performance in the most demanding environments.
This MOSFET is built upon Infineon's advanced OptiMOS™ 5 technology, a platform renowned for its ultra-low figure-of-merit (R DS(on) x Q G). This technical achievement translates directly into superior system performance: significantly reduced conduction and switching losses. For end applications, this means higher overall efficiency, which is paramount for extending the driving range in electric vehicles (EVs) and minimizing energy consumption in industrial motor drives and power supplies.
A key attribute of the IPD80R2K8CEATMA1 is its exceptionally low on-state resistance (R DS(on)) of just 2.8 mΩ (max) at 10 V. This minimal resistance ensures that power losses are kept to an absolute minimum during operation, leading to cooler running temperatures and reducing the need for extensive and costly cooling mechanisms. Furthermore, its high power density capability allows designers to create more compact and lighter systems without sacrificing power output or performance, a critical factor in space-constrained automotive applications like 48V board net systems, DC-DC converters, and electric power steering (EPS).
Beyond raw electrical performance, this component is designed for robustness. It offers an outstanding body diode robustness (commutated ruggedness), ensuring high reliability during hard commutation events common in motor control circuits. Its qualification for automotive application grade AEC-Q101 guarantees that it meets the stringent quality and reliability standards required for vehicle electronics, capable of operating reliably over a wide temperature range and under harsh conditions.
In industrial contexts, the MOSFET excels in a variety of roles, including server and telecom power supplies, industrial motor drives, solar inverters, and battery management systems. Its combination of low losses and high switching speed makes it an ideal choice for both hard- and soft-switching topologies, enabling designers to push the boundaries of efficiency and power density.
ICGOOODFIND: The Infineon IPD80R2K8CEATMA1 is a top-tier power MOSFET that sets a high benchmark for efficiency and power density. Its ultra-low R DS(on), enabled by cutting-edge OptiMOS™ 5 technology, makes it an indispensable component for engineers designing next-generation automotive and industrial systems where minimizing energy loss and maximizing reliability are non-negotiable.
Keywords: OptiMOS™ 5 Technology, Ultra-Low R DS(on), Automotive Grade (AEC-Q101), High Power Density, High Efficiency.
