Infineon IKW25N120H3: A High-Performance TRENCHSTOP™ IGBT for Power Switching Applications
In the realm of power electronics, achieving an optimal balance between efficiency, ruggedness, and switching performance is a constant challenge. The Infineon IKW25N120H3 stands out as a robust solution engineered to meet these demanding requirements. As part of Infineon's renowned TRENCHSTOP™ IGBT family, this device is specifically designed for high-performance power switching applications, including motor drives, uninterruptible power supplies (UPS), and solar inverters.
The core of the IKW25N120H3's superiority lies in its advanced trench gate field-stop technology. This architecture is pivotal for minimizing saturation voltage (VCE(sat)) and consequently, reducing conduction losses. Unlike conventional planar technologies, the trench structure enables a higher cell density, leading to more efficient current flow and enhanced overall performance. With a collector-emitter voltage of 1200 V and a nominal collector current of 25 A, this IGBT is well-suited for systems operating at high voltages and currents.
A key feature of this device is its low switching losses, which are crucial for high-frequency operations. The combination of the soft switching behavior and the integrated ultra-fast reverse recovery diode significantly reduces turn-off losses and mitigates electromagnetic interference (EMI). This makes the IKW25N120H3 an excellent choice for circuits where thermal management and efficiency are paramount.
Furthermore, the module offers exceptional short-circuit ruggedness (tsc = 10 µs), ensuring reliable operation under fault conditions. The positive temperature coefficient of the saturation voltage also simplifies the paralleling of multiple devices for higher power applications, providing designers with greater flexibility.
The IKW25N120H3 is offered in a TO-247 package, which is widely recognized for its superior thermal performance and mechanical robustness. This package ensures efficient heat dissipation, allowing the device to operate at high junction temperatures while maintaining stability and longevity.
ICGOODFIND: The Infineon IKW25N120H3 is a high-efficiency, robust TRENCHSTOP™ IGBT that excels in power switching applications. Its advanced technology minimizes both conduction and switching losses, while its rugged design ensures reliability in demanding environments, making it a top-tier choice for modern power electronic systems.
Keywords: TRENCHSTOP™ IGBT, Power Switching, Low Switching Losses, High Efficiency, Short-Circuit Ruggedness.
