Infineon IPD25CN10N: A High-Performance Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, power density, and reliability in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPD25CN10N, a N-channel power MOSFET engineered to excel in demanding switching applications. This device encapsulates advanced engineering to meet the rigorous requirements of contemporary power management systems.

Built on Infineon's proprietary OptiMOS™ technology, the IPD25CN10N is a benchmark for performance in the 100V voltage class. Its core strength lies in its exceptionally low typical on-state resistance (R DS(on)) of just 2.5 mΩ. This ultra-low resistance is a critical factor, as it directly translates to minimized conduction losses. When the MOSFET is switched on, less power is wasted as heat, leading to significantly higher overall system efficiency and reduced thermal management demands. This makes the component ideal for high-current applications.

Furthermore, the device boasts an outstanding switching performance. The low gate charge (Q G ) and low effective output capacitance (C OSS ) ensure rapid turn-on and turn-off transitions. This is paramount in high-frequency switching circuits, such as switch-mode power supplies (SMPS), motor drives, and DC-DC converters, where switching losses can become a dominant factor in total power loss. The fast switching capability allows designers to increase the operating frequency, which in turn enables the use of smaller passive components like inductors and capacitors, thereby increasing power density.

The IPD25CN10N is also characterized by its robustness and reliability. It features a high avalanche ruggedness and an extended safe operating area (SOA), providing a strong margin of safety against voltage spikes and unexpected transients commonly encountered in real-world operating environments. The component is also qualified according to the highest quality standards, ensuring long-term operational stability.

Housed in a TO-252 (DPAK) package, it offers a excellent power-to-footprint ratio, making it suitable for space-constrained applications while still providing effective thermal dissipation.

ICGOOODFIND: The Infineon IPD25CN10N stands out as a superior choice for designers focused on maximizing efficiency and power density. Its combination of ultra-low R DS(on), fast switching speed, and high robustness makes it an exceptionally versatile and reliable power MOSFET for advanced automotive, industrial, and computing applications.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, OptiMOS™, Switching Performance.